Coupled quantum dot memristor
US10510956B2 · kind B2 · utility
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Key dates
| Filing date | Apr 21, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Apr 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2216/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to novel memristive devices, uses thereof, and processes for their preparation. In a first aspect, the disclosure provides a quantum memristor, including a first quantum dot (QD1) which is capacitively coupled to a second quantum dot (QD2), a source electrode, a drain electrode, and a bath electrode, wherein the source electrode and the drain electrode are coupled via quantum tunneling to QD1 and the bath electrode is coupled via quantum tunneling to QD2, and wherein QD2 is capacitively coupled to either the source electrode or the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.