Patent · US Active

Vapor-deposited nanoscale ionic liquid gels as gate insulators for low-voltage high-speed thin film transistors

US10510971B2 · kind B2 · utility

1Cited by

0References

20Claims

0Family size

Assignee

Massachusetts Institute of Technology · US

Inventors

Andong Liu · Cambridge, US
Karen K. Gleason · Cambridge, US
Minghui Wang · Beijing, CN

Key dates

Filing date	Jul 18, 2018
Grant date	Dec 17, 2019
Priority date	—
Expiry date	Jul 18, 2038

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC08J2333/26
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Described are materials and methods for fabricating low-voltage MHz ion-gel-gated thin film transistor devices using patternable defect-free ionic liquid gels. Ionic liquid gels made by the initiated chemical vapor deposition methods described herein exhibit a capacitance of about 1 μF cm−2 at about 1 MHz, and can be as thin as about 20 nm to about 400 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.