Patent · US Active

Method for fabricating a nanostructure

US10511151B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

TECHNISCHE UNIVERSITÄT MÜNCHEN · DE

Inventors

Gregor Koblmueller · Regensburg, DE
Benedikt Mayer · Innisfail, CA
Jonathan Finley · Aschheim, DE
Gerhard Abstreiter · Hallbergmoos, DE

Key dates

Filing date	Sep 14, 2016
Grant date	Dec 17, 2019
Priority date	—
Expiry date	Sep 14, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/818
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smaller than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.