Gate driver for depletion-mode transistors
US10511303B2 · kind B2 · utility
0Cited by
50References
19Claims
0Family size
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Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/066
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure presents a circuit, a method, and a system to drive a half-bridge switch using depletion (D) mode compound semiconductor (III-V) switching transistors for a DC-DC converter using at least one driver to drive the switches of the circuit. Also included is at least one charge pump electrically connected to a gate of the transistor, to maintain a voltage that holds the transistor in an off-state. The circuit includes AC coupling capacitors to level shift a voltage and realize fast transistor switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.