Patent · US Active

Semiconductor device

US10515819B2 · kind B2 · utility

3Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 18, 2017
Grant dateDec 24, 2019
Priority date
Expiry dateDec 18, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31144
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a substrate having a first region and a second region, the first region including memory cells, and the second region including transistors for driving the memory cells, and device isolation regions disposed within the substrate to define active regions of the substrate. The active regions include a first guard active region surrounding the first region, a second guard active region surrounding a portion of the second region, and at least one dummy active region disposed between the first guard active region and the second guard active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.