Laser lift-off method of wafer
US10515854B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Sep 12, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer (10) to form a plurality of cracking points (19), the plurality of cracking points (19) are located on a separating surface (20); and exerting, under a temperature of −400K to 0K, forces with opposite directions to opposite sides of the wafer (10), thereby dividing the wafer (10) into two pieces along the separating surface (20).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.