Patent · US Active

TSV interconnect structure and manufacturing method thereof

US10515892B2 · kind B2 · utility

2Cited by

4References

20Claims

0Family size

Assignee

Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

Weihai Bu · Shanghai, CN
Hanming Wu · Shanghai, CN

Key dates

Filing date	Dec 31, 2013
Grant date	Dec 24, 2019
Priority date	—
Expiry date	Aug 26, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a through-substrate-via structure includes forming a via hole in a substrate, depositing a conductive material in the via hole, forming an annular groove in the substrate surrounding the conductive material, and depositing a dielectric material in the annular groove with overhang portions of the deposited dielectric material at a top surface of the groove forming an air gap in an interior portion of the groove.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.