Flash memories and methods for manufacturing the same

US10515971B2 · kind B2 · utility

Assignee

• VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION · TW

Inventors

• Ankit Kumar · San Diego, US
• Manoj Kumar · Barwala, IN
• Chia-Hao Lee · New Taipei, TW

Key dates

• Filing date: Dec 11, 2017
• Grant date: Dec 24, 2019
• Expiry date: Dec 11, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/035

Abstract

A method for manufacturing a flash memory includes forming a first conductive layer on a semiconductor substrate, and forming a patterned mask layer on the first conductive layer, wherein the first conductive layer is exposed by an opening of the patterned mask layer. The method also includes forming a second conductive layer on the patterned mask layer, wherein the second conductive layer extends into the opening. The method further includes performing a first etching process on the second conductive layer to form a spacer on a sidewall of the opening, and performing an oxidation process to form an oxide structure in the opening. In addition, the method includes performing a second etching process by using the oxide structure as a mask to form a floating gate, and forming a source region and a drain region in the semiconductor substrate.