Stacked photodetector assemblies
US10515993B2 · kind B2 · utility
48Cited by
88References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An exemplary stacked photodetector assembly includes a first wafer and a second wafer bonded to the first wafer. The first wafer includes a SPAD and has a thickness T1 configured to minimize absorption by the first wafer of photons included in light incident upon the first wafer while the SPAD is in a disarmed state. The second wafer has a thickness T2 configured to provide structural support for the first wafer. The stacked photodetector assembly includes a fast gating circuit electrically coupled to the SPAD and configured to arm and disarm the SPAD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.