Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
US10516068B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2018 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Jan 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/20
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Various technologies pertaining to formation or treatment of a thallium bromide crystal to improve the operable lifespan of a device that incorporates the thallium bromide crystal are described herein. In exemplary embodiments, treatments including focused ion beam implantation, selective material removal, and buffer layer application are performed on a thallium bromide crystal to inhibit motion of dislocations toward a region at which an electrical contact is desirably installed. In other exemplary embodiments, a thallium bromide crystal is doped with impurities during formation that inhibit the motion of dislocations in the crystal. In still other exemplary embodiments, a thallium bromide crystal is formed by way of processes that inhibit dislocation formation during crystal growth or eliminate dislocations in an existing thallium bromide mass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.