Laserdiode

US10516252B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Alexander Bachmann · Ismaning, DE
• Volker Grossmann · Regensburg, DE

Key dates

• Filing date: Feb 22, 2018
• Grant date: Dec 24, 2019
• Expiry date: Feb 22, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/18
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A laser diode includes an active zone that emits radiation in a lateral emission angle range in a plane of the active zone via an emission side of a layer arrangement, an electrical contact is configured on a top side of the layer arrangement, the electrical contact includes a metallic adhesion layer and at least one metallic contact layer, the adhesion layer is arranged on the layer arrangement, the adhesion layer includes a layer stack including a first and a second layer, the first layer is arranged on the layer arrangement, the first layer is configured in a planar fashion, the second layer is subdivided into at least one first and at least one second partial surface, the adhesion layer is arranged in the first partial surface, and the contact layer is arranged on the first partial surface and in the second partial surface.