Via fill substrate, production method therefor, and precursor therefor
US10517178B2 · kind B2 · utility
2Cited by
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10Claims
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Assignee
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Key dates
| Filing date | Sep 21, 2016 |
| Grant date | Dec 24, 2019 |
| Priority date | — |
| Expiry date | Sep 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1338
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for producing a via-filled substrate includes a metal film forming step of forming a metal film containing an active metal on a hole part wall surface of an insulating substrate having a hole part, a filling step of filling a conductor paste having a volume change rate before and after firing of −10 to 20% in the hole part in which the metal film is formed, and a firing step of firing the insulating substrate in which the conductor paste is filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.