Method for enabling optimized material deposition
US10519544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2017 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Sep 1, 2037 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF05D2230/314
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for atomic layer deposition of high temperature materials from single source precursors includes placing a substrate in a reaction zone in gas isolation from other reaction zones and contacting the substrate in the reaction zone with a reactant to allow atoms in the reactant to combine with reaction sites on the substrate to form a layer of the reactant on the substrate. The substrate is then placed in a purge zone and purged with a flowing inert gas. The substrate is then placed in a final reaction zone in gas isolation from the other zones wherein the final reaction zone has an atmosphere and temperature to decompose adsorbed reactant and/or form desired phases with crystallinity to form a layer of material. The substrate is then placed in a purge zone and the process is repeated until a layer of material of desired thickness is formed on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.