Wafer support, chemical vapor phase growth device, epitaxial wafer and manufacturing method thereof
US10519566B2 · kind B2 · utility
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5References
2Claims
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Key dates
| Filing date | Dec 27, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Dec 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02634
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.