Long short-term memory cells with saturating gating functions
US10521715B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2016 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06N3/09
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and apparatus, including computer programs encoded on computer storage media, for implementing long-short term memory cells with saturating gating functions. One of the systems includes a first Long Short-Term Memory (LSTM) cell, wherein the first LSTM cell is configured to, for each of the plurality of time steps, generate a new cell state and a new cell output by applying a plurality of gates to a current cell input, a current cell state, and a current cell output, each of the plurality of gates being configured to, for each of the plurality of time steps: receive a gate input vector, generate a respective intermediate gate output vector from the gate input, and apply a respective gating function to each component of the respective intermediate gate output vector, wherein the respective gating function for at least one of the plurality of gates is a saturating gating function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.