Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer
US10522363B2 · kind B2 · utility
0Cited by
2References
30Claims
0Family size
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Key dates
| Filing date | Jul 24, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Jul 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.