Patent · US Active

Susceptor and method for manufacturing same

US10522386B2 · kind B2 · utility

1Cited by
1References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 1, 2015
Grant dateDec 31, 2019
Priority date
Expiry dateJun 13, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68757
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a bottom surface (11a) and a side surface (11b) of the recess (11), and a silicon carbide layer (20) formed on a surface of the base material (10) except for the recess (11).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.