Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode
US10522696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.