Manufacturing method of quantum dot, light-emitting material, light-emitting device, and display apparatus
US10522711B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 3, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Aug 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A manufacturing method of a quantum dot, a light-emitting material, a light-emitting device, and a display apparatus are provided. The manufacturing method of a quantum dot includes the following steps. A first solution including at least one element selected from the group consisting of an element in Group XII and an element in Group XIII is provided. A second solution including at least one element selected from the group consisting of an element in Group XV and an element in Group XVI is provided. The first solution and the second solution are mixed. A thermal treatment is performed on the mixed solution. A range of the heating rate of the thermal treatment is 2° C./min to 10° C./min.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.