High-frequency line
US10522892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2016 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P5/087
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
This invention provides a high-frequency line adopting a structure to suppress an impedance variation and occurrence of an excessive power loss in high-frequency wiring having intersection with an optical waveguide. A high-frequency line is a microstrip line which has a basic configuration of stacking a ground electrode, a dielectric layer, and a signal electrode in this order on a SI-InP substrate. In addition, as shown in a transverse sectional view, an optical waveguide core made of InP-based semiconductor intersects with the high-frequency line in a crossing manner. A width of the signal electrode is partially increased in a certain region covering the intersection with the optical waveguide along a propagating direction of the high-frequency line. In the microstrip line, the width of the signal electrode is partially increased from w1 to w2, and characteristic impedance is thus reduced as compared to one with the uniform width w1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.