Semiconductor device
US10523188B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2017 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Jun 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: first through fourth active regions spaced apart from one another; a first gate line disposed to overlap with the first and second active regions, but not with the third and fourth active regions, and to extend in a first direction; a second gate line disposed to overlap with the third and fourth active regions, but not with the first and second active regions, and to extend in the first direction while being spaced apart from the first gate line; and a dummy gate line disposed to overlap with the first through fourth active regions and a field region, to be spaced apart from the first and second gate lines in a second direction, and to extend in the first direction, wherein a signal input to the first or second active region is transmitted to the third or fourth active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.