Patent · US Active

Metal chalcogenide thin film electrode, method for the production thereof and use

US10526716B2 · kind B2 · utility

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16Claims

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Assignee

TECHNISCHE UNIVERSITÄT BERLIN · DE

Inventors

Michael LUBLOW · Berlin, DE
Anna Fischer · Munich, DE
Matthias Driess · Berlin, DE
Thomas Schedel-Niedrig · Berlin, DE
Marcel-Philip Luecke · Lambach, DE

Key dates

Filing date	Dec 4, 2014
Grant date	Jan 7, 2020
Priority date	—
Expiry date	Dec 4, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E60/36
WIPO fieldMaterials, metallurgy
WIPO sectorChemistry

Abstract

The invention relates to a method for producing a metal chalcogenide thin film electrode, comprising the steps: The invention also relates to a metal chalcogenide thin film electrode which can be produced by the method and its use as an anode for releasing oxygen during (photo)electrochemical water splitting.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.