Magnetic attack detection in a magnetic random access memory (MRAM)
US10529400B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Magnetic Random Access Memory (MRAM) array has a plurality of main MRAM bitcells and a plurality of canary MRAM bitcells in which a first Magnetic Tunnel Junction (MTJ) diameter of each of the main MRAM bitcells is larger than any second MTJ diameter of any of the canary bitcells. Test circuitry is configured to periodically poll the canary bitcells to determine if values stored at the canary bitcells match expected canary values. When the values do not match the expected canary values, the test circuitry is configured to indicate a presence of a magnetic field, and in response to determining the presence of the magnetic field, continue to poll the canary bitcells until the values match the expected canary values which indicates the magnetic field is no longer present.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.