Electron flood lithography
US10529537B1 · kind B1 · utility
0Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Feb 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31794
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.