Process of forming electron device having gate electrode
US10529574B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Sep 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an opening corresponding to the gate electrode on the insulating film; forming a recess in the insulating film using the photoresist as an etching mask, the recess leaving a rest portion in the insulating film; exposing the photoresist in oxygen plasma; baking the photoresist to make an edge of the opening thereof dull; etching the rest portion of the insulating film using the dulled photoresist as an etching mask; and forming the gate electrode so as to be in contact with the semiconductor layer through the opening in the insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.