Power semiconductor device having a trench with control and field electrode structures

US10529811B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Thomas Feil · Villach, AT
• Michael Hutzler · Villach, AT

Key dates

• Filing date: Jan 18, 2019
• Grant date: Jan 7, 2020
• Expiry date: Jan 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

According to an embodiment of a power semiconductor device, the device includes a semiconductor body coupled to a first load terminal and a second load terminal and configured to conduct a load current between the first load terminal and the second load terminal. A trench extends into the semiconductor body along an extension direction and includes an insulator. A first electrode structure included in the trench is configured to control the load current. A second electrode structure included in the trench is arranged separately and electrically insulated from the first electrode structure. The first electrode structure and the second electrode structure are spatially displaced from each other along the extension direction such that they do not have a common extension range along the extension direction. Each of the first electrode structure and the second electrode structure is made of a metal.