Semiconductor device, power module, and power conversion device
US10529813B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Nov 13, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including an n-type semiconductor layer formed on a substrate, having a cell region and a gate pad region, and including silicon carbide, and a unit cell formed in the cell region is configured as follows. A p-type body region formed in the semiconductor layer of the gate pad region, a first insulating film formed on the p-type body region, a conductive film formed on the first insulating film, and a second insulating film formed on the conductive film, and a gate pad formed on the second insulating film. Then, the film thickness of the first insulating film is 0.7 μm or more, and more favorably 1.5 μm or more. In addition, the electric field strength of the first insulating film is 3 MV/cm or less. Then, an opening portion is formed on the first insulating film in the gate pad region, and a resistance portion and a connection portion corresponding to the conductive film are formed in the opening portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.