High voltage Schottky diode and manufacturing method thereof
US10529819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2017 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Dec 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
The present invention discloses a Schottky diode. The Schottky diode comprises a substrate having a device well. A drift region is disposed within the device well. A guard ring region is disposed within the device well and adjacent to the drift region. A field isolation region and a dielectric film are disposed on a top substrate surface. The dielectric film is aligned to the field isolation region. A field plate is disposed over the field isolation region and the dielectric film. The field plate completely covers a top surface of the dielectric film and partially overlaps the guard ring region. A conductive contact layer is disposed adjacent to the dielectric film. The conductive contact layer contacts a portion of the device well to define a Schottky diode interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.