Method for gallium nitride on diamond semiconductor wafer production
US10529820B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 15, 2015 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Oct 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN on diamond wafer and method for manufacturing the same is provided. The method comprising: disposing a GaN device or wafer on a substrate, having a nucleation layer disposed between the substrate and a GaN layer; affixing the device to a handling wafer; removing the substrate and substantially all the nucleation layer; and bonding the GaN layer to a diamond substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.