Semiconductor device

US10529845B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ashita Mirchandani · El Segundo, US
• Thomas Feil · Villach, AT
• Maximilian Roesch · Villach, AT
• Britta Wutte · Fürstenfeld, AT

Key dates

• Filing date: Mar 9, 2018
• Grant date: Jan 7, 2020
• Expiry date: Mar 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127

Abstract

In an embodiment, a semiconductor device includes a semiconductor body having a field effect transistor device with an active region and an edge termination region that surrounds the active region on all sides. The active region includes a first serpentine trench in the semiconductor body, a first field plate in the first serpentine trench, a second serpentine trench in the semiconductor body, and a second field plate in the second serpentine trench. The first serpentine trench is separate and laterally spaced apart from the second serpentine trench.