Semiconductor device and method of manufacturing the same
US10529846B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Jul 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a gate electrode, and a first contact plug. The semiconductor substrate includes a first surface and a second surface. Over the semiconductor substrate, a source region, a drain region, a drift region, and a body region are formed. A first trench in which the gate electrode is buried is formed in the first surface. The first surface includes an effective region and a peripheral region. The first trench extends from the peripheral region over the effective region along a first direction. The gate electrode includes a portion opposed to and insulated from the body region sandwiched between the source region and the drift region. In the peripheral region, the first contact plug is electrically coupled to the gate electrode buried in the first trench such that its longer side is along the first direction when seen in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.