Semiconductor device and method of forming semiconductor fin thereof
US10529862B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
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Key dates
| Filing date | Jan 20, 2017 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Jan 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
Abstract
A semiconductor device includes a substrate, an epitaxial channel structure and a gate structure. The epitaxial channel structure is located above the substrate. The epitaxial channel structure has a bottom and a top. The bottom is between the substrate and the top, and the bottom has a width less than that of the top.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.