Patent · US Active

Semiconductor device

US10529866B2 · kind B2 · utility

2Cited by

27References

24Claims

0Family size

Assignee

X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

Elizabeth Kho Ching Tee · Sebauh, MY
Alexander Dietrich Hölke · Sebauh, MY
Steven John Pilkington · Sebauh, MY
Deb Kumar Pal · Sebauh, MY

Key dates

Filing date	May 30, 2012
Grant date	Jan 7, 2020
Priority date	—
Expiry date	May 30, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/116
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.