Photoelectric conversion device including quantum dot layers
US10529879B2 · kind B2 · utility
4Cited by
3References
14Claims
0Family size
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Key dates
| Filing date | May 25, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | May 25, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A photoelectric conversion device may include a substrate, a photoactive layer disposed on the substrate, and a first electrode and a second electrode respectively connected to corresponding edges of the photoactive layer. The photoactive layer may include a first oxide semiconductor layer on the substrate, and a plurality of quantum dot layers and a plurality of second oxide semiconductor layers that are alternately formed on the first oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.