Resist composition and resist pattern forming method
US10534264B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jan 24, 2018 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Feb 2, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F2800/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition which generates an acid through exposure and whose solubility in a developer changes by the action of an acid. The resist composition contains a polymer compound having at least two kinds of specific constituent units. A resist pattern forming method, including forming a resist film on a support using the resist composition, subjecting the resist film to exposure, and forming a resist pattern through patterning by developing the resist film having undergone exposure by using a developer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.