Electrostatic discharge protection device and fabrication method thereof

US10535583B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Jun Feng · Longbeilingcun, CN
• Zheng Hao Gan · Shanghai, CN

Key dates

• Filing date: Jan 17, 2017
• Grant date: Jan 14, 2020
• Expiry date: Feb 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electrostatic discharge (ESD) protection device includes a substrate including a device region and an ESD protection structure formed on the substrate in the device region. The device region includes a center region and edge regions separated by the center region, while the ESD protection structure includes a plurality of gate structures. The ESD protection device also includes a dielectric layer formed to cover the plurality of gate structures and a plurality of heat dissipation structures formed on the dielectric layer with each heat dissipation structure aligned with a corresponding gate structure along a direction perpendicular to a surface of the substrate. The area size of each heat dissipation structure aligned with a corresponding gate structure in the center region is larger than the area size of each heat dissipation structure aligned with a corresponding gate structure in the edge region.