High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
US10535730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Apr 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.