Thin film transistor and fabricating method thereof, and array substrate

US10535781B2 · kind B2 · utility

Assignees

• BOE Technology Group Co., Ltd. · CN
• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN

Inventors

• Lin Chen · Beijing, CN
• Haijiao Qian · Beijing, CN
• Chengshao Yang · Beijing, CN
• Mengyu Luan · Beijing, CN

Key dates

• Filing date: May 24, 2018
• Grant date: Jan 14, 2020
• Expiry date: May 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

The disclosure provides a thin film transistor and a fabricating method thereof, and an array substrate. The thin film transistor includes a gate, a first active layer, a second active layer, a first source, a first drain, a second source and a second drain which are provided above a base substrate. The first active layer is located at a side of the gate facing the base substrate, and the second active layer is located at a side of the gate facing away from the first active layer. The first source and the first drain are located at a side of the first active layer facing away from the gate and are connected with the first active layer. The second source and the second drain are located at a side of the second active layer facing away from the gate and are connected with the second active layer.