Semiconductor light emitting device
US10535796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2019 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | May 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor light emitting device includes a multi-quantum-well structure, a first potential barrier layer, a first capping layer, a second capping layer, and an electron barrier layer stacked in order on a growth substrate. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is an undoped semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.