Light emitting device light-amplified with graphene and method for manufacturing same
US10535802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2017 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Jan 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
The purpose of the present invention is to provide a method for manufacturing a light-amplified optoelectronic device, on which pristine or doped graphene is transferred. Specifically, the method includes the steps of: depositing a first electrode, as a thin film, on the light emitting device; transferring pristine or doped graphene on the electrode thin film; etching the light emitting device in contact with the electrode thin film on which the transferred graphene has been transferred, thereby removing a part of the electrode thereon; spin-coating photoresist on the etched light emitting device; removing the photoresist from the spin-coated light emitting device, thereby forming an electrode thin film in a spin form and the pristine transferred to or graphene doped to the electrode thin film; and depositing metal on a second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.