Substrate materials for quantum processors
US10535809B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2018 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a general aspect, an integrated microwave circuit is disclosed for processing quantum information. The integrated microwave circuit includes a substrate having a first surface and a second surface opposite the first surface. The substrate is formed of a silicon oxide material having a loss tangent no greater than 1×10−5 at cryogenic temperatures at or below 120 K. The integrated microwave circuit also includes qubit circuitry disposed on the first surface that includes a Josephson junction. A ground plane is disposed on the first surface or the second surface. In some variations, the silicon oxide material is fused silica. In other variations, the silicon oxide material is crystalline quartz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.