Crystal laminate structure
US10538862B2 · kind B2 · utility
2Cited by
5References
14Claims
0Family size
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Key dates
| Filing date | Feb 17, 2016 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Mar 24, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24992
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystal laminate structure includes a Ga2O3-based substrate, and a β-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The β-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.