Semiconductor device including a gate electrode and a conductive structure
US10541243B2 · kind B2 · utility
4Cited by
15References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2016 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Jul 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.