Quantum dot photodetector apparatus and associated methods
US10541348B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 17, 2017 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Mar 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1433
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method comprising: depositing a quantum dot solution onto an as-grown layer of channel material to form a layer of quantum dot material having a substantially uniform thickness across the area of the layer of quantum dot material; and transferring the layers of channel and quantum dot material as a single stack onto a substrate comprising source and drain electrodes such that both the layers of channel and quantum dot material substantially conform to the topography of the underlying substrate and electrodes whilst maintaining the substantially uniform thickness of quantum dot material, the source and drain electrodes configured to enable a flow of electrical current through the layer of channel material, the layer of quantum dot material configured to generate electron-hole pairs on exposure to incident electromagnetic radiation to produce a detectable change in the flow of electrical current which is indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.