Patent · US Active

Piezoelectric thin film element

US10541360B2 · kind B2 · utility

0Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 14, 2017
Grant dateJan 21, 2020
Priority date
Expiry dateMar 14, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/877
  • WIPO fieldTextile and paper machines
  • WIPO sectorMechanical engineering

Abstract

A piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between wherein the first electrode is a platinum metal electrode having an average grain size greater than 50 nm and wherein a piezoelectric thin film adjacent the platinum metal electrode comprises a laminate having a plurality of piezoelectric thin film layers wherein a piezoelectric thin film layer contacting the platinum metal electrode comprises lead zirconate titanate (PZT) of composition at or about PbZrxTi1-xO3 where 0<x≤0.60 and has a degree of pseudo cubic {100} orientation greater than or equal to 90%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.