Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
US10541653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2018 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | May 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/75
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor with a drain-source capacitance that is relatively low, an input impedance matching circuit, and an input-side harmonic termination circuit. The input impedance matching circuit includes a harmonic termination circuit, which in turn includes a first inductance (a first plurality of bondwires) and a first capacitance coupled in series between the transistor output and a ground reference node. The input impedance matching circuit also includes a second inductance (a second plurality of bondwires), a third inductance (a third plurality of bondwires), and a second capacitance coupled in a T-match configuration between the input lead and the transistor input. The first and second capacitances may be metal-insulator-metal capacitors in an integrated passive device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.