Patent · US Active

Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures

US10541663B2 · kind B2 · utility

5Cited by
13References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 13, 2016
Grant dateJan 21, 2020
Priority date
Expiry dateOct 13, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/09
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.