Patent · US Active

Surface acoustic wave (SAW) resonator having trap-rich region

US10541667B2 · kind B2 · utility

3Cited by

5References

34Claims

0Family size

Assignee

Avago Technologies International Sales Pte. Limited · SG

Inventors

Stephen Roy Gilbert · San Francisco, US
Richard C. Ruby · Menlo Park, US

Key dates

Filing date	Aug 24, 2016
Grant date	Jan 21, 2020
Priority date	—
Expiry date	Aug 12, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH03H9/6483
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A surface acoustic wave (SAW) resonator device includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate comprises a bulk region, and a surface region. The surface region has a high trap density, and a reduced carrier mobility, compared to the bulk region. A piezoelectric layer, having a first surface and a second surface, is disposed over the semiconductor substrate. A plurality of electrodes are disposed over the first surface of the piezoelectric layer, and the plurality of electrodes are configured to generate surface acoustic waves in the piezoelectric layer. The SAW resonator device also comprises a layer disposed between the first surface of the semiconductor substrate and the second surface of the piezoelectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.