Method for preparing semiconductor nanocrystal siloxane composite resin composition
US10544359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2018 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Mar 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0362
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention relates to a method for preparing a semiconductor nanocrystal siloxane composite resin composition, and a cured product using the same. In the preparation method, the semiconductor nanocrystals are added during a non-hydrolytic sol-gel condensation reaction for forming a siloxane structure so that a siloxane resin having a dense inorganic network, which includes a siloxane bond, is encapsulated and thus is dispersed in the semiconductor nanocrystals through a chemical interaction and a chemical bond, thereby preventing a reduction in inherent characteristics (quantum efficiency) of the semiconductor nanocrystals resulting from an external oxidizing environment. Accordingly, when the curing of the resin composition is carried out, a cured product, which can be applied to various applications including a semiconductor nanocrystal siloxane composite having excellent reliability, can be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.