Patent · US Active

Nanostructured gas sensor

US10545108B2 · kind B2 · utility

3Cited by

2References

14Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Ashwin Samarao · Sunnyvale, US
Gary O'Brien · Palo Alto, US
Ando Feyh · Palo Alto, US

Key dates

Filing date	Dec 28, 2015
Grant date	Jan 28, 2020
Priority date	—
Expiry date	Jun 9, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0262
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A thin film gas sensor device includes a substrate, a first pillar, a second pillar, a nanostructured thin film layer, and a first and a second electrical contact. The first and second pillars are supported by the substrate. The nanostructured thin film layer is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo a reduction in a density of the holes in the presence of a target gas, thereby increasing an electrical resistance of the nanostructured thin film layer. The first and the second electrical contacts are operably connected to the nanostructured thin film layer, such that the increase in electrical resistance can be detected.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.